dual igbtmod? nfj-series module 400 amperes/1200 volts CM400DU-24NFJ powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 12/11 rev. 1 outline drawing and circuit diagram description: powerex igbtmod? modules are designed for use in high frequency applications; 30 khz for hard switching applications and 60 to 70 khz for soft switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low e sw(off) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: power supplies induction heating welders ordering information: example: select the complete part module number you desire from the table below -i.e. CM400DU-24NFJ is a 1200v (v ces ), 400 ampere dual igbtmod? power module. type current rating v ces amperes volts (x 50) cm 400 24 dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 1.14+0.04/-0.01 29.0+1.0/-0.5 d 3.660.01 93.00.25 e 2.440.01 62.00.25 f 0.83 21.2 g 0.16 4.0 h 0.24 6.0 j 0.59 15.0 k 0.55 14.0 l 0.35 9.0 m 0.33 8.5 n 0.69 17.5 p 0.85 21.5 q 0.98 25.0 dimensions inches millimeters r 0.47 12.0 s m6 metric m6 t 0.26 dia. 6.5 dia. u 0.4 10.0 v 0.02 0.5 w 0.87 22.2 x 0.72 18.25 y 0.36 9.25 z 0.71 18.0 aa 0.28 7.0 ab 0.16 4.0 ac 0.11 2.8 ad 0.3 7.5 ae 1.23 31.4 af 0.21 5.3 h h v v v v g2 e2 e1 g1 c2e1 c1 x b w e u y a d p q q z k aa z z c f m ad m m l l aa ac ab s - nuts (3 typ) t - (4 typ) label c2e1 e2 c1 e1 g1 e2 g2 k k j g af r e2 n ae
CM400DU-24NFJ dual igbtmod? nfj-series module 400 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 12/11 rev. 1 maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (operation) *2 i c 400 amperes collector current (pulse) *2 i cm 800 amperes maximum power dissipation (t c = 25c) *2,*4 p c 2450 watts emitter current (operation) *2 i e *1 400 amperes emitter current (pulse) *2 i em *1 800 amperes isolation voltage (charged part to baseplate, f = 60 hz, ac 1 minute) v iso 2500 v rms junction temperature t j -40 ~ +150 c storage temperature t stg -40 ~ +125 c mechanical characteristics characteristics symbol test conditions min. typ. max. units torque strength m main terminals, m6 screw 31 35 40 in-lb m mounting, m6 screw 31 35 40 in-lb weight 580 grams *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) is measured point is just under the chips. 0 31.4 44.7 0 35.0 48.2 0 78.8 65.8 46.6 33.6 tr2 tr2 di2 di2 di1 di1 tr1 tr1 label side each mark points to the center position of each chip. tr1 / tr2: igbt di1 / di2: fwdi tolerance 1 mm
powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NFJ dual igbtmod? nfj-series module 400 amperes/1200 volts 3 12/11 rev. 1 electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 1.4 a gate-emitter threshold voltage v ge(th) i c = 40ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 400a, v ge = 15v, t j = 25c *3 5.0 6.5 volts i c = 400a, v ge = 15v, t j = 125c *3 5.0 volts forward transfer admittance | fs | i c = 400a, v ce = 10v *3 120 s input capacitance c ies 63 nf output capacitance c oes v ce = 10v, v ge = 0v 5.3 nf reverse transfer capacitance c res 1.2 nf total gate charge q g v cc = 600v, i c = 400a, v ge = 15v 1800 nc turn-on delay time t d(on) 300 ns turn-on rise time t r v cc = 600v, i c = 400a, 100 ns turn-off delay time t d(off) v ge = 15v, r g = 0.78, 500 ns turn-off fall time t f inductive load, 150 ns reverse recovery time t rr *1 i e = 400a 100 ns reverse recovery charge q rr *1 7.0 c emitter-collector voltage v ec *1 i e = 400a, v ge = 0v *3 5.5 7.0 volts internal gate resistance r gint t c = 25c, per switch 3.0 ? external gate resistance r g 0.78 7.8 ? thermal resistance characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt part *4 0.051 k/w thermal resistance, junction to case r th(j-c) d per fwdi part *4 0.093 k/w contact thermal resistance r th(c-f) case to heatsink, 0.02 k/w thermal grease applied *4*5 *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *3 pulse width and repetition rate should be such as to cause negligible temperature rise. *4 case temperature (t c ) and heatsink temperature (t f ) measured point is just under the chips. if using this value, thermal resistance of heatsink, r th(f-a) , should be measured just under the chips. *5 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. 0 31.4 44.7 0 35.0 48.2 0 78.8 65.8 46.6 33.6 tr2 tr2 di2 di2 di1 di1 tr1 tr1 label side each mark points to the center position of each chip. tr1 / tr2: igbt di1 / di2: fwdi tolerance 1 mm
CM400DU-24NFJ dual igbtmod? nfj-series module 400 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 12/11 rev. 1 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 -1 10 1 0 2 4 6 5 3 1 7 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c v ge = 0v c ies c oes c res i c = 800a i c = 400a i c = 160a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 8 7 t j = 25 c 800 600 400 200 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) 800 600 0 400 200 0 20 10 15 5 v ge = 15v t j = 25c t j = 125c collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 9 6 8 0 4 2 1 3 5 7 0 600 600 400 200 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0.78 t j = 125c inductive load t f 10 3 t j = 25c t j = 125c gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (typical) 20 0 15 10 5 0 500 1000 1500 2500 2000 i c = 400a v cc = 600v v cc = 400v emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0.78 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NFJ dual igbtmod? nfj-series module 400 amperes/1200 volts 5 12/11 rev. 1 time, (s) transient thermal impedance characteristics (typical) 10 0 10 -5 10 -4 10 1 10 -3 10 -2 10 -1 10 0 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.051k/w (igbt) r th(j-c) = 0.093k/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching energy, (mj/pulse) 10 2 10 -1 10 0 10 1 10 0 10 1 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 0.78 t j = 125c inductive load v cc = 600v v ge = 15v i c = 400a t j = 125c inductive load e on e off e rr e on e off e rr collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical)
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